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Magnetic Random Access Memory ( MRAM )

Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology available today that began its development in the 1990s.
Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements
MRAM has similar performance to SRAM, similar density to DRAM but much lower power consumption than DRAM,
It is currently in production by Everspin,

ES1GB-N03 nvNITRO™ PCIe HHHL Accelerator Card

The ES1GB-N03 nvNITRO™ Accelerator Card is a PCIe HHHL card based on Everspin’s STT-MRAM products and an NVMe protocol that delivers greater than 1.5 Million random write, write/read or read IOPS with 6μs latency.  It supports full data integrity on a power failure and virtually unlimited endurance using Everspin nvNITRO™ Accelerators.

Highlights Applications ES1GB-N03
•  1GB storage capacity •  Power Fail Safe Data & Metadata Cache/Buffer
•  PCIe Gen3 x8, half-height, low profile card •  Burst Data Deserializer
•  NVMe 1.1+ in block mode •  Database and Application Accelerators
•  Memory mapped IO (MMIO) in byte mode •  Storage Accelerator For All Flash Storage
•  Ultra-low access latency (as low as 2μS) Array (FSA)
•  Consistent latency (short tail) •  File System Accelerator (Parallel & Serial)
•  Customer-defined features using own RTL •  Power Fail Safe Software Defined Storage
with programmable FPGA •  Power Fail Safe Software and NVMe RAID
•  General purpose accelerator development •  OLTP Log Cache Acceleration
platform with programmable onboard FPGA, •  Storage Fabric (Network) Accelerators
Network SERDES, SATA, SODIMM etc. •  Shared Remote Persistent Memory
•  Development license for NVMe core IP