磁性非易失MRAM
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磁性随机存储器芯片(MRAM)磁性随机存储器芯片(MRAM)

一种非挥发性的磁性随机存储器。
它拥有静态随机存储器(SRAM)的高速读取写入能力,
以及动态随机存储器(DRAM)的高集成度,而且基本上可以无限次地重复写入
Everspin MRAM其原理是利用电子自旋的磁性结构,来提供不会产生损耗的非挥发特性。
Everspin MRAM可在集成了硅电路的磁性材料中存储信息,以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。

ES1GB-U201 U.2 Accelerator
 

The ES1GB-U201 is a U.2 form factor NVMe card based on Everspin’s STT-MRAM products and Simultaneous Block mode (NVMe) and Byte Mode (PCIe Direct Memory Access). They offer extremely low and predictable latency and are power fail safe without system support requirements.

Highlights Applications ES1GB-U201
•  1GB Storage Capacity •  Power Fail Safe Data & Metadata Cache/Buffer
•  PCIe Gen3 x4 •  Burst Data Deserializer
•  U.2 2.5” form factor •  Database and Application Accelerators
•  NVMe 1.1+ in block mode •  Storage Accelerator For All Flash Storage
•  Memory mapped IO (MMIO) in byte mode     Array (FSA)
•  Ultra-low access latency (uS) •  File System Accelerator (Parallel & Serial)
•  Consistent latency (short tail) •  Power Fail Safe Software Defined Storage
•  Customer defined features using own RTL •  Power Fail Safe Software And NVMe RAID
   with programmable FPGA •  OLTP Log Cache Acceleration
•  Development license for NVMe core IP •  Storage Fabric (Network) Accelerators
  •  Shared Remote Persistent Memory